K. Guan, MultiProbe Inc., Santa Barbara, CA; M. Hoffmann, Infineon Dresden, Dresden, Germany

Summary: Gate Disturb defects in general are evoked by two defect mechanisms, which can clearly be distinguished by AFP-analysis. In most cases (~70 %) the malfunction is caused by TRAP’s into TOX. The CHE-effect as the root cause of defect is obviously scarce (~30 %).