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Session 18: Nanoprobing and Nano Scale Electronic Characterization | ||||
Location: Lalique Ballroom (InterContinental Hotel Dallas) | ||||
(Please check final room assignments on-site). | ||||
Session Description: This session is focused on new developments in nanoprobing and nanoscale electrical characterization. Areas include SEM nanoprobing, AFM nanoprobing, scanning capacitance, electron beam current charcterization, and more. Nanoprobing is becoming a necessary step in the FA process flow before physical FA is performed. | ||||
Session Chairs: | Mr. Taylor Cavanah DCG Systems, Inc, TX Mr. Anton Riley Multiprobe Inc, Santa Barbara, CA | |||
10:50 AM | 18.1 | Characterizing Gate Disturb Embedded Flash Memory Cells by Atomic Force Probing | ||
11:15 AM | 18.2 | Characterization and Identification of a Non-LDD Induced Vt Shift Failure Mechanism Via Nano-Probe Analysis | ||
11:40 AM | 18.3 | Characterization of a Resistive Path to a Gate Node Using Tunneling Current Measurements | ||
12:05 PM | 18.4 | Electron Beam Absorbed Current as a Means of Locating Metal Defectivity On 45nm SOI Technology | ||
12:30 PM | 18.5 | Frequency Sensitive Soft Fails In SRAM Arrays |