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Tuesday, November 16, 2010 - 2:35 PM
4.1
Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis
J. G. V. Hassel, X. M. Zhang, NXP Semiconductors, Nijmegen, Netherlands
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Summary:
Different approaches for failure analysis on silicon substrate dopant related failures and dislocations and the appropriate TEM preparation are discussed
