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| Session 4: Sample Preparation for Technological Analysis | ||||
| Location: Lalique Ballroom (InterContinental Hotel Dallas) | ||||
| (Please check final room assignments on-site). | ||||
| Session Description: | ||||
| Session Chairs: | Mr. Kultaransingh (Bobby) Hooghan FEI KAUST, Saudi Arabia James T. Cargo LSI Corporation, Allentown, PA | |||
| 2:35 PM | 4.1 | Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis | ||
| 3:00 PM | 4.2 | X-Sectional Scanning Capacitance Microscopy (SCM) Applications On Deep Submicron Devices at Specific Sites | ||
| 3:25 PM | 4.3 | High Volume and Fast Turn around Automated In-Line TEM Sample Preparation for Manufacturing Process Monitoring | ||