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Wednesday, November 17, 2010 - 4:00 PM
13.3

Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

Z. Pan, W. Wei, Exponent Failure Analysis Associates, Menlo Park, CA; F. Li, Air Liquide – Balazs NanoAnalysis, Fremont, CA

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Summary: This abstract introduces our effort in failure analysis of a 200nm-thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.