T. Kane, S. Pendyala, M. Tenney, IBM, Hopewell Junction, NY

Summary: Leading edge 22nm node technologies require newer methodology to detect FAB in-line defects without damaging costly wafer substrates.300mm whole wafer atomic force probing replaces legacy in-line SEM inspections, optical/darkfield inspections and destructive in-line 300mm Focused Ion Beam tools for defect identification