F. Infante, P. Philippe, R. Gomez, Centre Nationale d'Etudes Spatiales (CNES), Toulouse, France; D. Lewis, IXL laboratory, Talence, France; F. battistella, S. annereau, Thales, TOULOUSE, France

Summary: The innovations in packaging technologies in the last decade have brought microelectronic designers to shift from Moore’s law to More than Moore’s, where the advances in device assembly now allow more dies to be stacked inside one single package. By doing this, the number of potential failures we can have at assembly level has increased exponentially. At present, no technique has been able to respond to the need for the precise localization of defects which are deep inside a complex package. For this reason, a new technique for failure localization for three-dimensional structures is needed. In this paper the technique proposed, based on the coupling of magnetic measurements and simulations, is applied to a three-dimensional structure in order to precisely localize the current path which is buried deep inside the package. A new method, based on parameters fittings of magnetic simulations, is then applied in order to evaluate the distance between the current and the sensor with accuracy.the current and the sensor with accuracy.