Characterization and TCAD Simulation of 90nm Technology PMOS Transistor Under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement

Tuesday, November 13, 2012: 8:50 AM

101AB (Phoenix Convention Center)

Ms. Roxane Llido , STMicroelectronics, Rousset, France

Mr. Alexandre Sarafianos , STMicroelectronics, Rousset, France

Mr. Olivier Gagliano , STMicroelectronics, Rousset, France

Ms. Valérie Serradeil , STMicroelectronics, Rousset, France

Mr. Vincent Goubier , STMicroelectronics, Rousset, France

Mr. Mathieu Lisart , STMicroelectronics, Rousset, France

Mr. Gérald Haller , STMicroelectronics, Rousset, France

Mr. Vincent Pouget , IMS laboratory, University of Bordeaux, Talence, France

Prof. Dean Lewis , IMS laboratory, University of Bordeaux, Talence, France

Mr. Jean-Max Dutertre , Centre de Microélectronique de Provence, Gardanne, France

Ms. Assia Tria , Centre de Microélectronique de Provence, Gardanne, France

6.3 Characterization and TCAD Simulation of 90nm Technology PMOS Transistor Under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement