Gapsok Do
Gapsok Do
SK Hynix Semiconductor Inc
Research & Development Division
San 136-1, Ami-ri, Bubal-eub, Kyoungki-do
Ichon-si
South Korea
467-701
Papers:
11.7
In-Situ Characterization of Switching Mechanism in Phase Change Random Access Memory (PRAM) Using Transmission Electron Microscopy (TEM)