11.7
In-Situ Characterization of Switching Mechanism in Phase Change Random Access Memory (PRAM) Using Transmission Electron Microscopy (TEM)
In-Situ Characterization of Switching Mechanism in Phase Change Random Access Memory (PRAM) Using Transmission Electron Microscopy (TEM)
Thursday, November 7, 2013: 1:05 PM
Meeting Room 230A (San Jose McEnery Convention Center)
Summary:
In this paper, we report an analytical technique to observe continuous phase transition and void formation process of single confined GST cell by multi-pulse AC biasing test of the thin foil specimen using in-situ TEM.
In this paper, we report an analytical technique to observe continuous phase transition and void formation process of single confined GST cell by multi-pulse AC biasing test of the thin foil specimen using in-situ TEM.
See more of: Session 11: Nanoprobing and Nanoscale Electrical Failure Analysis
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