Seungyun Lee

SK Hynix Semiconductor Inc
Research & Development Division
San 136-1, Ami-ri, Bubal-eub, Kyoungki-do
Ichon-si South Korea 467-701

Papers:
10.14 A Reduction of Off-Leakage Current of SWD (Sub-WordLine Driver) Pmosfet for Nwl-Based Mobile DRAM 11.7 In-Situ Characterization of Switching Mechanism in Phase Change Random Access Memory (PRAM) Using Transmission Electron Microscopy (TEM)