PRODUCT YIELD, TEST & DIAGNOSTICS: Study of Retention Time Variation Due to Electric Field Change by Adjacent Word-line in DRAM
PRODUCT YIELD, TEST & DIAGNOSTICS: Study of Retention Time Variation Due to Electric Field Change by Adjacent Word-line in DRAM
Tuesday, December 8, 2020: 2:20 PM
Summary:
In this study, we investigated the change of e-field due to the influence of adjacent word-line (especially f-gate) and the resulting leakage current. It was confirmed that it showed different phenomena depending on the type of leakage current (junction leakage, GIDL), and it was confirmed by simulation that it was due to changes in the e-field. Through this, it was found that the tREF is worsened when the adjacent word-line is disturbed than the existing tREF. It is expected that this will help to analyze reliability failure by grasping unexpected degradation of junction leakage. It is also significant that the type of leakage current can be defined without destructive analysis.
In this study, we investigated the change of e-field due to the influence of adjacent word-line (especially f-gate) and the resulting leakage current. It was confirmed that it showed different phenomena depending on the type of leakage current (junction leakage, GIDL), and it was confirmed by simulation that it was due to changes in the e-field. Through this, it was found that the tREF is worsened when the adjacent word-line is disturbed than the existing tREF. It is expected that this will help to analyze reliability failure by grasping unexpected degradation of junction leakage. It is also significant that the type of leakage current can be defined without destructive analysis.