Bottom Electrode Properties and Electrical Field Cycling Effects on HfOx based Resistive Switching Memory Device

Wednesday, December 9, 2020: 11:15 AM
Dr. Juntao Li , IBM Research, Albany, NY
Dr. Youngseok Kim , IBM Research, Albany, NY
Dr. Dexin Kong , IBM Research, Albany, NY
Dr. Kangguo Cheng , IBM Research, Albany, NY
Dr. Soon-Cheon Seo , IBM Research, Albany, NY
Mr. Cory Robinson , IBM Research, Albany, NY
Dr. Ramachandran Muralidhar , IBM Research, Yorktown Heights, NY
Dr. Nicole Saulnier , IBM Research, Albany, NY
Dr. Robert Robison , IBM Research, Albany, NY
Dr. Alex Varghese , IBM Research, Albany, NY
Dr. Ishtiaq Ahsan , IBM Research, Albany, NY
Dr. Takashi Ando , IBM Research, Yorktown Heights, NY
Dr. Vijay Narayanan , IBM Research, Yorktown Heights, NY