Addressing Failure Analysis Challenges in Advanced Packages and MEMS using a novel Phase and Darkfield X-ray Imaging System
Addressing Failure Analysis Challenges in Advanced Packages and MEMS using a novel Phase and Darkfield X-ray Imaging System
Monday, December 7, 2020: 11:15 AM
Summary:
Currently gaps in non-destructive 2D and 3D imaging in PFA exist due to lack of resolution to resolve sub-micron defects in microbumps and lack of contrast image defects within low Z materials, including sidewall delamination between Si die and underfill, bulk cracks in the underfill, in organic substrates, RDL; Si die cracks; voids within the underfill and in the epoxy. Most of these categories of defects cannot be detected non-destructively by existing techniques such as C-SAM or microCT/XRM. Using a novel lab-based X-ray Phase contrast and Dark-field/ Scattering Contrast system we demonstrate the imaging of these types of defects in advanced semiconductor packages and MEMS, including those within organic substrates
Currently gaps in non-destructive 2D and 3D imaging in PFA exist due to lack of resolution to resolve sub-micron defects in microbumps and lack of contrast image defects within low Z materials, including sidewall delamination between Si die and underfill, bulk cracks in the underfill, in organic substrates, RDL; Si die cracks; voids within the underfill and in the epoxy. Most of these categories of defects cannot be detected non-destructively by existing techniques such as C-SAM or microCT/XRM. Using a novel lab-based X-ray Phase contrast and Dark-field/ Scattering Contrast system we demonstrate the imaging of these types of defects in advanced semiconductor packages and MEMS, including those within organic substrates