FIB CIRCUIT ANALYSIS AND EDIT: Influence of Dose Delivery of Low-Beam Energy STI Exposure on FinFET Devices
FIB CIRCUIT ANALYSIS AND EDIT: Influence of Dose Delivery of Low-Beam Energy STI Exposure on FinFET Devices
Tuesday, December 8, 2020: 1:50 PM
Summary:
We present a method for using Low Beam Energy Ga+ Focused Ion Beam to exposure Shallow Trench Isolation of active circuitry in 7nm process technology with virtually no impact to the device's functionality.
We present a method for using Low Beam Energy Ga+ Focused Ion Beam to exposure Shallow Trench Isolation of active circuitry in 7nm process technology with virtually no impact to the device's functionality.