Electrical probing of 7nm SRAMS/SOC at contact layer

Wednesday, December 9, 2020: 3:30 PM
Ms. Noor Jehan Saujauddin , Carl ZEISS SMT Inc., PCS SBU, Pleasanton, CA
Dr. Ted Lundquist , Carl ZEISS SMT Inc., PCS SBU, Pleasanton, CA
Mr. Tim Niemi , Carl ZEISS SMT Inc., PCS SBU, Pleasanton, CA
Dr. Baohua Niu , Carl ZEISS SMT Inc., PCS SBU, Pleasanton, CA

Summary:

At advanced node semiconductor process development, manufacturing and product failure analysis and fault isolation, nanoprobing is an indispensable technology. As the technology node scales down, transistors and materials used are more susceptible to electron beam induced damages and changes. As scanning electron microscope (SEM) energy decreases to minimize electron beam induced damage, imaging resolution degrades. Process scaling has not only affected patterning dimensions and pitch scaling, but also materials utilized in advanced nodes. The material used at the contact level has changed from tungsten to Cobalt (Co), in combination with ultra-low K dielectrics. These new materials tend to make sample prep and probing increasingly more challenging. At advanced nodes with sub 20nm contacts, probe landing accuracy and probe-contact stability are very important to maintain good electrical contact throughout the measurement time. In this presentation, we will discuss nanoprobing results from a 7nm SRAM obtained from commercially available leading edge 7nm SOC.