Application of Plasma Focused Ion Beam Technique in Advanced Technology Nodes

Tuesday, November 1, 2022: 3:45 PM
Ballroom B (Pasadena Convention Center)
Mr. Liangshan Chen , Samsung Austin Semiconductor, LLC, Austin, TX
Amado Longoria , Samsung Austin Semiconductor, LLC, Austin, TX
Gina Cha , Samsung Austin Semiconductor, LLC, Austin, TX
Gilbert Tovar , Samsung Austin Semiconductor, LLC, Austin, TX
Elena Ramirez , Samsung Austin Semiconductor, LLC, Austin, TX
Pingan Fang , Samsung Austin Semiconductor, LLC, Austin, TX
Yong Liu , Samsung Austin Semiconductor, LLC, Austin, TX
Andres Torres , Samsung Austin Semiconductor, LLC, Austin, TX
Marco Alcantara , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Christopher Penley , Samsung Austin Semiconductor, LLC, Austin, TX

Summary:

This paper reports the novel application of Plasma Focused Ion Beam (pFIB) to reveal subtle defects in advanced technology nodes. Two case studies presented, both of which alter the standard work procedure in order to find the defects. The first case highlights the precise milling capability of pFIB in discovering the metal buried via void that is easy-to-miss by standard failure analysis (FA) practice. The second utilizes pFIB circuit edit process to facilitate electrical isolation in pinpointing the exact failure location and thus enables identifying the defect more efficiently.
See more of: Case Studies: FA Processes
See more of: Technical Program