Failure analysis of InGaAs/GaAs nano-ridge lasers by electron beam based nanoprobing

Thursday, October 31, 2024: 9:00 AM
The Pointe (Hilton San Diego Bayfront)
Ms. Anjanashree M.R. Sharma , IMEC; KU Leuven, Heverlee, Belgium, IMEC; KU Leuven, Heverlee, Belgium
Mr. Ping-Yi Hsieh , KU Leuven, Heverlee, Belgium, IMEC, Heverlee, Belgium
Dr. Debi Prasad Panda , KU Leuven, Heverlee, Belgium, IMEC, Heverlee, Belgium
Dr. Kristof J.P. Jacobs , IMEC, Heverlee, Belgium
Mr. Jörg Jatzkowski , Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Sachsen-Anhalt, Germany
Dr. Frank Altmann , Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Sachsen-Anhalt, Germany
Dr. Didit Yudistira , IMEC, Heverlee, Belgium
Dr. Bernardette Kunert , IMEC, Heverlee, Belgium
Dr. Joris Van Campenhout , IMEC, Heverlee, Belgium
Prof. Jin Won Seo , KU Leuven, Heverlee, Belgium
Prof. Ingrid De Wolf , IMEC, Heverlee, Belgium, KU Leuven, Heverlee, Belgium

Summary:

FA of emerging devices such as nanoridge lasers is quite challenging. Conventional FA techniques cannot be directly used to localize the defects due to complexity in device architecture. In this paper, we report the systematic FA process to localize the defects in long array of devices using lock-in thermography. Further, we perform cross-section EBIC to identify the local degradation with spatial resolution of few nanometers. Furthermore , deep FA is performed to understand the cause for the failure.
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