Invited Talk: Manuel Stabentheiner, Infineon Technologies Austria AG, presents, “Failure analysis of GaN-on-Si power devices – challenges, workflows and test concepts”.
Title: “Failure analysis of GaN-on-Si power devices – challenges, workflows and test concepts”
Abstract:
Gallium nitride (GaN) offers fundamental advantages over silicon and enables unprecedented levels of performance and power density. However, the underlying power device concept of a high electron mobility (HEMT) transistor creates new challenges for failure analysis. In this presentation, the fundamental features of a GaN-on-Si technology and different failure analysis workflows are discussed. Especially the analysis of intrinsic and extrinsic hard fails poses a huge challenge both for technology development and failure analysis. The energy stored in internal capacitances will eventually lead to a large meltdown at the failure site, hindering the understanding of new failure modes and the relevance of defects therein. We further discuss and present measures how to analyze the failure and degradation mechanism in-depth using special device design and by using advanced failure analysis methods.
Biography
Manuel Stabentheiner is a Senior Staff Engineer working at Infineon Technologies Austria AG. He holds a bachelor's degree in technical physics and a diploma degree in material science from TU Vienna, which he attained in 2018. Joining Infineon in 2015, he initially specialized in physical failure analysis techniques. His work on the off-state degradation of p-GaN transistors during his diploma thesis and his activities in the development of GaN-specific failure analysis methods and workflows soon established him as a key expert in Infineon’s GaN failure analysis community. In 2021, he transitioned to the GaN technology development team and pursued his Ph.D. at TU Vienna, which he completed successfully in 2024. Throughout his Ph.D. studies, he focused on the electrical impact of dislocations on lateral and quasi-vertical GaN diodes. In his role as a technology development engineer, Dr. Manuel Stabentheiner works on the progressive enhancement of GaN material understanding at Infineon. His responsibilities extend to the exploration of leakage and degradation mechanisms, as well as the involvement in the predevelopment phase of forthcoming GaN device generations.
Ms. Sylvia Lewis, Sigray, Inc. and Ms. Susan Li, Infineon Technologies