Flip Chip and Backside Techniques
Flip Chip and Backside Techniques
Sunday, October 4, 2026: 9:00 AM
206A (Henry B. González Convention Center)
Summary:
State-of-the-art techniques for backside failure localization, focused ion beam destructive failure analysis and circuit edit through bulk silicon are essential for multi-level metallization and new flip chip packaging methods. This tutorial reviews the transmission of light through silicon and sample preparation required to implement backside failure analysis methodologies. After reviewing the theory behind the wavelength and doping dependence of light transmission through bulk silicon, we describe sample preparation techniques for backside analysis. The methods covered include a variety of mechanical, chemical, laser, and ion beam preparation techniques that are needed to prepare samples. The major categories discussed are 1) light transmission and image formation through Si, 2) global Si thinning by CNC (computer numerically controlled) milling, Mechanical Polishing, and RIE (reactive ion etching), 3) local Si thinning by FIB (focused ion beam) and LMC (laser microchemical) etching, 4) precision probe hole milling by FIB, and 5) sample ultra-thinning globally and locally.
State-of-the-art techniques for backside failure localization, focused ion beam destructive failure analysis and circuit edit through bulk silicon are essential for multi-level metallization and new flip chip packaging methods. This tutorial reviews the transmission of light through silicon and sample preparation required to implement backside failure analysis methodologies. After reviewing the theory behind the wavelength and doping dependence of light transmission through bulk silicon, we describe sample preparation techniques for backside analysis. The methods covered include a variety of mechanical, chemical, laser, and ion beam preparation techniques that are needed to prepare samples. The major categories discussed are 1) light transmission and image formation through Si, 2) global Si thinning by CNC (computer numerically controlled) milling, Mechanical Polishing, and RIE (reactive ion etching), 3) local Si thinning by FIB (focused ion beam) and LMC (laser microchemical) etching, 4) precision probe hole milling by FIB, and 5) sample ultra-thinning globally and locally.