Education Course: Beam-Based Defect Localization (Registration Required)
Saturday, October 3, 2026: 1:30 PM-5:30 PM
Saturday, October 3, 2026 | 1:30 – 5:30 p.m.
Instructor:
Ed Cole, SANDIA National Labs
Pricing
Member – $325
Member (Student) – $199
NonMember – $425
NonMember (Student) – $199
This short course reviews SEM (scanning electron microscopy) and SOM (scanning optical microscopy) techniques for IC failure analysis. All of these techniques can be performed on a standard SEM or SOM (using the proper laser wavelengths). The use of advanced electron/optical beam test systems will also be discussed. The goal is to provide beneficial information to both novice and experienced failure analysts. Topics are: 1) Standard techniques: secondary electron imaging for surface topology, backscattered electron imaging, voltage contrast, capacitive coupling voltage contrast, electron beam induced current imaging, and x-ray microanalysis; 2) Specialized SEM techniques: novel voltage contrast applications, resistive contrast imaging, and charge-induced voltage alteration (both high and low energy versions); and 3) SOM techniques: light-induced voltage alteration, thermally-induced voltage alteration/optical beam induced resistance change, Seebeck Effect imaging, soft defect localization/laser-assisted device alteration, laser logic probing, and solid immersion lens applications.
Biography: Edward I Cole, Jr. received a Ph.D. (1987) in physics from the University of North Carolina at Chapel Hill. His doctoral work involved the development and fundamental understanding of non-destructive, low energy electron beam techniques to analyze integrated circuits. He joined the Failure Analysis Department of Sandia National Laboratories in 1987. His research interests are in the development and improvement of non-destructive IC failure analysis tools, with emphasis on electron and optical beam techniques and he has published frequently in the field of failure analysis. Two of the failure analysis techniques developed by teams Dr. Cole led, Charge-Induced Voltage Alteration (’95) and Light-Induced Voltage Alteration (’98), have won R&D 100 awards. In 1995 Dr. Cole was named a Distinguished Member of the Technical Staff at Sandia National Laboratories. In 2004 Dr. Cole was appointed to the position of Sandia Senior Scientist. He has served on the executive and management committees of the ISTFA and IRPS conferences, chairing the ISTFA’96 event. He has served on the Electronic Device Failure Analysis Society (EDFAS) Board of Directors from 1998-2004 and was EDFAS President from 2000-2002. He is presently immediate past-editor of the EDFAS Society’s magazine was General Chair of the IRPS’07, and serves on the IRPS Board of Directors and ASM Volunteerism committee. In 2013 he was appointed a Sandia Fellow and a Fellow of ASM International.
