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Session 16: Optoelectronic Devices
Location: Meeting Room J3 (San Jose McEnery Convention Center)
(Please check final room assignments on-site).
Session Description: The optoelectronic devices session this year has two papers on TEM, including new work showing how plan view TEM can be used to determine the exact type of ESD (forward / reverse, short / long pulse) responsible for failure, and another showing how a plan view sample can then be cross sectioned to understand which layers defects originated in and obtain data in 3 dimensions. It also contains a paper on emission microscopy to map dislocation networks in VCSELs, and one on metal migration causing failures in InGaN LEDs, diagnosed by CL, EBIC PL, and EBSD.

Editors:Michael Cheng JDS Uniphase, San Jose, CA
Dr. Robert Herrick Finisar Corporation, Santa Jose, CA
David McElfresh Sun Microsystems, Santa Clara, CA
Dr. Timothy A. Strand Agility Communications, Goleta, CA
Dr. Dan Vacar Sun Microsystems, San Diego, CA
Session Chair:Dr. Robert Herrick Finisar Corporation, Santa Jose, CA
4:15 PMAn Atlas of ESD Failure Signatures in Vertical Cavity Surface Emitting Lasers
4:40 PMPhysics of Failure Investigation of Dark vertical-cavity surface-emitting lasers: Detection of Reverse-Bias Electroluminescence by Photo-Emission Microscopy
5:05 PM3-D Defect Characterization using Plan View and Cross-Sectional TEM/STEM Analysis