13.1 SIMS Analysis for the Threshold Voltage Shift of Power MOS Caused by Abnormal Dopant Diffusion

Tuesday, November 13, 2012: 3:00 PM
102AB (Phoenix Convention Center)
Mr. Yanhua Huang , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore
Lei Zhu , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore
Kenny Ong , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore
Hanwei Teo , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore
Dr. Shuting Chen , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore
Younan Hua , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore
Miao Shen , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore
Prof. Hao Gong , National University of Singapore, Singapore, Singapore
Dr. Binghai Liu , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore
See more of: Session 13: Defect Analysis
See more of: Symposium