13 Session 13: Defect Analysis

Tuesday, November 13, 2012: 3:00 PM-4:15 PM
102AB (Phoenix Convention Center)
Session Chairs:
Mr. Terence Kane and Mr. Phil Kaszuba
3:00 PM
SIMS Analysis for the Threshold Voltage Shift of Power MOS Caused by Abnormal Dopant Diffusion
Mr. Yanhua Huang, GLOBALFOUNDRIES Singapore Pte Ltd; Lei Zhu, GLOBALFOUNDRIES Singapore Pte Ltd; Kenny Ong, GLOBALFOUNDRIES Singapore Pte Ltd; Hanwei Teo, GLOBALFOUNDRIES Singapore Pte Ltd; Dr. Shuting Chen, GLOBALFOUNDRIES Singapore Pte Ltd; Younan Hua, GLOBALFOUNDRIES Singapore Pte Ltd; Miao Shen, GLOBALFOUNDRIES Singapore Pte Ltd; Prof. Hao Gong, National University of Singapore; Dr. Binghai Liu, GLOBALFOUNDRIES Singapore Pte Ltd
3:25 PM
Study of Si Crystal Defects by Chemical Preferential Etching and Its Application on Si Dislocation Defects Caused by Laser Spike Annealing (LSA)
Dr. Shuting Chen, GLOBALFOUNDRIES Singapore Pte Ltd; Lihong Li, GLOBALFOUNDRIES Singapore Pte Ltd; Anyan Du, GLOBALFOUNDRIES Singapore Pte Ltd; Younan Hua, GLOBALFOUNDRIES Singapore Pte Ltd
3:50 PM
A Novel Integrated Reliability Test System for BEOL TDDB Study
Mr. Jifeng Chen, University of Connecticut; Dr. Peilin Song, IBM T.J. Watson Research Center; Tom Shaw, IBM T.J. Watson Research Center; Mr. Franco Stellari, IBM T.J. Watson Research Center; Lynne Gignac, IBM T.J. Watson Research Center; Chris Breslin, IBM T.J. Watson Research Center; Dirk Pfeiffer, IBM T.J. Watson Research Center; Griselda Bonila, IBM T.J. Watson Research Center
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