Study of Si Crystal Defects by Chemical Preferential Etching and Its Application on Si Dislocation Defects Caused by Laser Spike Annealing (LSA)

Tuesday, November 13, 2012: 3:25 PM

102AB (Phoenix Convention Center)

Dr. Shuting Chen , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore

Lihong Li , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore

Anyan Du , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore

Younan Hua , GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore

13.2 Study of Si Crystal Defects by Chemical Preferential Etching and Its Application on Si Dislocation Defects Caused by Laser Spike Annealing (LSA)