10.3
Gate Bridge to Drain Contact Characteristic in Floating Gate Memory
Gate Bridge to Drain Contact Characteristic in Floating Gate Memory
Monday, November 4, 2013
The Tech Museum
Summary:
The studies about the electric behavior of gate short issue almost depended on simulation work or figured out in electrical circuit. In this paper, we demonstrate several gate-to-drain short failure cases through drain contact on flash memory cell; research about the correlation between defect structure and floating gate cell characteristic behavior.Using nanoprober, the Id-Vg curve drops to negative current because of reverse current direction from gate, and the short place happen in different layer also cause diverse threshold voltage and drain saturation current caused by the combination of bridge material resistance and the poly gate.
The studies about the electric behavior of gate short issue almost depended on simulation work or figured out in electrical circuit. In this paper, we demonstrate several gate-to-drain short failure cases through drain contact on flash memory cell; research about the correlation between defect structure and floating gate cell characteristic behavior.Using nanoprober, the Id-Vg curve drops to negative current because of reverse current direction from gate, and the short place happen in different layer also cause diverse threshold voltage and drain saturation current caused by the combination of bridge material resistance and the poly gate.