2.4
Challenges for Physical Failure Analysis of 3D-Integrated Devices - Sample Preparation and Analysis to Support Process Development of Tsvs
Challenges for Physical Failure Analysis of 3D-Integrated Devices - Sample Preparation and Analysis to Support Process Development of Tsvs
Monday, November 4, 2013: 2:20 PM
Meeting Room 230A (San Jose McEnery Convention Center)
Summary:
The integration of thtough-silicon vias into semiconductor manufacturing flows require additional process steps that may influence the performance or reliability of the devices. Physical characterization is needed during development, qualification and manufacturing. This paper provides an overview of typical analytical questions and explains sample preparation and analysis techniques to address them.
The integration of thtough-silicon vias into semiconductor manufacturing flows require additional process steps that may influence the performance or reliability of the devices. Physical characterization is needed during development, qualification and manufacturing. This paper provides an overview of typical analytical questions and explains sample preparation and analysis techniques to address them.