5.1
22nm BEOL TDDB Defect Localization and Root Cause Analysis
22nm BEOL TDDB Defect Localization and Root Cause Analysis
Tuesday, November 5, 2013: 9:30 AM
Meeting Room 230A (San Jose McEnery Convention Center)
Summary:
22nm node BEOL technologies and below require Copper Manganese liner additions or selective CVD Cobalt Capping with PVD Ta(N) and CVD Cobalt Liners for requisite electronmigration performance. Subtle TDDB defects associated with these liner metallization schemes employing ultra low k BEOL dielectric films can shrink/cause voids under incident energetic electron or ion beams.
22nm node BEOL technologies and below require Copper Manganese liner additions or selective CVD Cobalt Capping with PVD Ta(N) and CVD Cobalt Liners for requisite electronmigration performance. Subtle TDDB defects associated with these liner metallization schemes employing ultra low k BEOL dielectric films can shrink/cause voids under incident energetic electron or ion beams.