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Silicon Junction Profile Delineation By Anodic Etching in HF/HNO3/CH3COOH Solution
Silicon Junction Profile Delineation By Anodic Etching in HF/HNO3/CH3COOH Solution
Monday, November 4, 2013
The Tech Museum
Summary:
An anodic etching technology is used for silicon junction profile delineation. Experimental result shows that the etching rate is determined by dopant type, of which P type silicon etching rate will be enhanced while the N type silicon become inactive when an external positive voltage is applied. The experiment verifies the role of the hole carrier on the silicon etching. The proposed method can maintain N type silicon in a inactive condition in solution, revealing the junction profile of P+/NW, N+/PW, and NW/PW under the same time recipe.
An anodic etching technology is used for silicon junction profile delineation. Experimental result shows that the etching rate is determined by dopant type, of which P type silicon etching rate will be enhanced while the N type silicon become inactive when an external positive voltage is applied. The experiment verifies the role of the hole carrier on the silicon etching. The proposed method can maintain N type silicon in a inactive condition in solution, revealing the junction profile of P+/NW, N+/PW, and NW/PW under the same time recipe.