2.1
3D Void Imaging in Through Silicon Vias By X-Ray Nanotomography in An SEM
3D Void Imaging in Through Silicon Vias By X-Ray Nanotomography in An SEM
Monday, November 4, 2013: 1:05 PM
Meeting Room 230A (San Jose McEnery Convention Center)
Summary:
3D integration requires new 3D characterization techniques to investigate defects inside devices ( Through Silicon Vias, Copper Pillars...). An original sample preparation (based on the last generation of Plasma-FIB) is first reported; then a scanning scheme based on X-ray tomography within an SEM is proposed and assessed. The potential of the method is shown on a sample containing 4 TSVs embedded in silicon. The achieved resolution is in the sub-200nm range on sample as big as 100 micrometers.
3D integration requires new 3D characterization techniques to investigate defects inside devices ( Through Silicon Vias, Copper Pillars...). An original sample preparation (based on the last generation of Plasma-FIB) is first reported; then a scanning scheme based on X-ray tomography within an SEM is proposed and assessed. The potential of the method is shown on a sample containing 4 TSVs embedded in silicon. The achieved resolution is in the sub-200nm range on sample as big as 100 micrometers.