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Session 11: Nanoprobing and Nanoscale Electrical Failure Analysis

Thursday, November 7, 2013: 9:00 AM-3:50 PM
Meeting Room 230A (San Jose McEnery Convention Center)
Session Chairs:
Mr. John Sanders and Mr. Andy Erickson
9:00 AM
11.1
Optical Nanoprobe Electrical Microscopy
Dr. Stephen Bradley Ippolito, Independent Scientific
9:25 AM
Open
9:50 AM
Break
10:05 AM
11.3
Device Characterization Using AFP Nanoprobing for the Localization of New Product Design Weakness
Mr. Ang Ghim Boon, GLOBALFOUNDRIES Singapore Pte Ltd; Dr. Alfred C.T. Quah, GLOBALFOUNDRIES Singapore
10:30 AM
11.4
SEM-Based Nanoprobing On 40, 32 and 28nm CMOS Devices-Challenges for Semiconductor Failure Analysis
Mr. Erik Paul, GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG; Mr. Ryan Ross, GlobalFoundries
10:55 AM
11.5
The Unique and Completed Characteristics of Device Behaviors in the Nanoprobing Analysis and Application for LDD Missing
Mr. Li-Lung Lai, Semiconductor Manufacturing International (Shanghai) Corporation
11:20 AM
11.6
A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing
Mr. Wei-Chih Wang, Inotera Memories Inc.; Dr. Jian Shing Luo, Inotera Memories Inc.
11:45 AM
Lunch
1:05 PM
11.7
In-Situ Characterization of Switching Mechanism in Phase Change Random Access Memory (PRAM) Using Transmission Electron Microscopy (TEM)
Dr. Seungjoon Jeon, SK Hynix Semiconductor Inc; Sungkyu Son, SK Hynix Semiconductor Inc; Jangwon Oh, SK Hynix Semiconductor Inc; Won Kim, SK Hynix Semiconductor Inc; Hojoung Kim, SK Hynix Semiconductor Inc; Jong Hak Lee, SK Hynix Semiconductor Inc; Seungho Woo, SK Hynix Semiconductor Inc; Gapsok Do, SK Hynix Semiconductor Inc; Seungyun Lee, SK Hynix Semiconductor Inc; Kyungjoon Baek, POSTECH; Sangho Oh, POSTECH
1:30 PM
11.8
Physical and Electrical Performance Comparison of Identical 28nm Qualcomm Telecommunication Die Produced By Samsung and Tsmc
Mr. Sean Zumwalt, MultiProbe; Mr. Anton Riley, Multiprobe Inc; Mr. Sinjin Dixon-Warren, Chipworks
1:55 PM
11.9
Nanoprobing As An Essential and Fast Methodology in Identification of Failure's Root Cause for Advanced Technology
Mr. Boon Lian Yeoh, GLOBALFOUNDRIES; Mr. Yinzhe Ma, Globalfoundries US; Oh Khiam, Globalfoundries US; Nyi Ohnmar, Globalfoundries US; Dr. Chuan Zhang, Globalfoundries Inc.; Donald Nedeau, Globalfoundries Inc.; Lim Seng Keat, Globalfoundries Inc.; King Ming Chu, Globalfoundries Inc.
2:20 PM
11.10
Failure Analysis Due to Slightly Unetched Hard Mask Using Nano Probe
Jong Hak Lee, SK Hynix semiconductor Inc.; Mr. Jong Eun Kim, SK hynix; Chang Su Park, SK hynix; Nam Il Kim, SK hynix; Jang Won Moon, SK hynix; Jong Chae Kim, SK hynix; Soo Yong Son, SK hynix; Kyung Dong Yoo, SK hynix; Sung Joo Hong, SK hynix
2:45 PM
Break
3:00 PM
11.11
Dc/Dv and C-V Characterization of Gate Resistance Defects in Edram Circuits
Ms. Sweta Pendyala, IBM; David Albert, IBM; Michael Tenney, IBM; Katherine. V Hawkins, IBM
3:25 PM
11.12
Applications of Nanoprobing for Localization of Design for Manufacturing Issues On Analogue-to-Digital Converter On Advanced Technology Node
Dr. Alfred C.T. Quah, GLOBALFOUNDRIES Singapore; Dr. Changqing Chen, GLOBALFOUNDRIES Singapore; Mr. Ghim Boon Ang, GLOBALFOUNDRIES Singapore; D NAGALINGAM, GLOBALFOUNDRIES Singapore; Mr. Yan Li, GLOBALFOUNDRIES Singapore; Dr. Jie Zhu, GLOBALFOUNDRIES Singapore; Soh Ping Neo, GLOBALFOUNDRIES Singapore; Dr. SiPing Zhao, GLOBALFOUNDRIES Singapore
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