5.10
Conversion of a D-Mode FET to An E-Mode FET Via Electrostatic Discharge in a GaAs Power Amplifier Duplexer Module

Tuesday, November 5, 2013: 3:00 PM
Meeting Room 230A (San Jose McEnery Convention Center)
Dr. Rose Emergo , TriQuint, Hillsboro, OR
Mr. Steve Brockett , TriQuint Semiconductor, Inc., Hillsboro, OR

Summary:

This paper outlines the systematic isolation of an electrostatic discharge defect on a depletion-mode FET. The ESD damage converted a small portion of the DFET into an enhancement-mode FET and affected the logic circuit such that the device was stuck on a single power mode at both band frequencies.