12.2
Thermal Laser Stimulation Technique for AlGaN/GaN Hemt Technologies Improvement
Thermal Laser Stimulation Technique for AlGaN/GaN Hemt Technologies Improvement
Thursday, November 7, 2013: 10:30 AM
Meeting Room 230B (San Jose McEnery Convention Center)
Summary:
As well as the improvement of the GaN MMIC (Monolithic Microwave Integrated Circuit) performances, the defects localization and the failure analysis of these devices are very challenging. Electroluminescence in Visible-Near Infrared range is currently used for leakage paths localization in the drain-source area of III-V components. Some difficulties may appear in the implementation of this defect localization technique for devices with large gate to source Field Plate (FP) structure as shown. Indeed, the field plate metal is masking part of the transistor active area and the gate. In this case, backside electroluminescence is usually required but the sample preparation can affect the thermal management of the device and its electrical stability. In this paper, we apply Thermal Laser Stimulation (TLS) techniques (OBIRCh, TIVA) on the die surface in order to localize defects in GaN based HEMTs.
As well as the improvement of the GaN MMIC (Monolithic Microwave Integrated Circuit) performances, the defects localization and the failure analysis of these devices are very challenging. Electroluminescence in Visible-Near Infrared range is currently used for leakage paths localization in the drain-source area of III-V components. Some difficulties may appear in the implementation of this defect localization technique for devices with large gate to source Field Plate (FP) structure as shown. Indeed, the field plate metal is masking part of the transistor active area and the gate. In this case, backside electroluminescence is usually required but the sample preparation can affect the thermal management of the device and its electrical stability. In this paper, we apply Thermal Laser Stimulation (TLS) techniques (OBIRCh, TIVA) on the die surface in order to localize defects in GaN based HEMTs.