1.4
Time-Resolved Thermoreflectance Imaging for Thermal Testing and Analysis
Time-Resolved Thermoreflectance Imaging for Thermal Testing and Analysis
Monday, November 4, 2013: 11:15 AM
Meeting Room 230AB (San Jose McEnery Convention Center)
Summary:
The Electric Static Discharge (ESD) protection devices are important for integrated circuit chips. A snapback Grounded Gate n-type Field Effect Transistor (GGNFET) is a state-of-the art component to protect circuits from ESD. We investigated the transient thermal response of a diode, GGFET, and silicon-controlled rectifier (SCR) fabricated on a test wafer, with a much lower voltage bias pulse to find abnormalities in the current distribution and heating in the device prior to applying the standardized pulse stress to evaluate the ESD performance. High speed full field thermal images are obtained using a lock-in thermoreflectance imaging technique. We achieve submicron spatial resolution and 100 nsec time resolution. This time resolution is precise enough to identify the thermal response after nano second ESD pulse is applied due to the thermal mass.
The Electric Static Discharge (ESD) protection devices are important for integrated circuit chips. A snapback Grounded Gate n-type Field Effect Transistor (GGNFET) is a state-of-the art component to protect circuits from ESD. We investigated the transient thermal response of a diode, GGFET, and silicon-controlled rectifier (SCR) fabricated on a test wafer, with a much lower voltage bias pulse to find abnormalities in the current distribution and heating in the device prior to applying the standardized pulse stress to evaluate the ESD performance. High speed full field thermal images are obtained using a lock-in thermoreflectance imaging technique. We achieve submicron spatial resolution and 100 nsec time resolution. This time resolution is precise enough to identify the thermal response after nano second ESD pulse is applied due to the thermal mass.