4.2
Implications of He and Ne Ion Beam Chemistry for Advanced Circuit Editing
Implications of He and Ne Ion Beam Chemistry for Advanced Circuit Editing
Monday, November 4, 2013: 3:25 PM
Meeting Room 230A (San Jose McEnery Convention Center)
Summary:
The introduction of the gas field ion source (GFIS) microscope has created significant interest for nanoscale imaging, lithography, and nanoscale synthesis. While most of the work has revolved around the helium ion source, there have been few reports on neon GFIS regarding stability, imaging and nanofabrication. Here we report the helium and neon ion beams induced chemistry: including metal deposition, dielectric deposition and chemical enhanced etching. The mass difference between He and Ne ions results in significant differences in the deposition yield, sputtering rate and electrical properties.
The introduction of the gas field ion source (GFIS) microscope has created significant interest for nanoscale imaging, lithography, and nanoscale synthesis. While most of the work has revolved around the helium ion source, there have been few reports on neon GFIS regarding stability, imaging and nanofabrication. Here we report the helium and neon ion beams induced chemistry: including metal deposition, dielectric deposition and chemical enhanced etching. The mass difference between He and Ne ions results in significant differences in the deposition yield, sputtering rate and electrical properties.