4
Session 4: Circuit Edit

Monday, November 4, 2013: 3:00 PM-4:15 PM
Meeting Room 230A (San Jose McEnery Convention Center)
Session Chairs:
Mr. Dane Scott and Dr. Michael DiBattista
3:00 PM
4.1
Geometric Trends in Circuit Edit
Dr. Michael DiBattista, Qualcomm Technologies, Inc; Mr. Martin Parley, Qualcomm Technologies, Inc; Mr. Roddy Cruz, Qualcomm Technologies, Inc; Mr. Don Lyons, Qualcomm Technologies, Inc; Ms. Jamie Langley, Qualcomm Technologies, Inc; Mr. Jonathan Lau, Qualcomm Technologies, Inc; Mr. Raymond Stevens, Qualcomm Technologies, Inc; Mr. Alan Wu, Qualcomm Technologies, Inc
3:25 PM
4.2
Implications of He and Ne Ion Beam Chemistry for Advanced Circuit Editing
Dr. Huimeng Wu, Carl Zeiss Microscopy, LLC; Lewis Stern, Carl Zeiss Microscopy, LLC; David Ferranti, Carl Zeiss Microscopy, LLC; Deying Xia, Carl Zeiss Microscopy, LLC; Mr. Michael W. Phaneuf, Fibics Incorporated
3:50 PM
4.3
Silicon & Package Preparation Options for Focused Ion Beam (FIB) Circuit Editing & General Packaging Failure Analysis
Mr. Steven B. Herschbein, IBM Systems & Technology; Mr. George K. Worth, IBM Systems & Technology; Mr. Edward S. Hermann, IBM Systems & Technology; Mr. Carmelo F. Scrudato, IBM Systems & Technology
See more of: Symposium
<< Previous Session | Next Session >>