7.7
Evaluation of Digital Holography Microscopy for Roughness Control Prior Wafer Direct Bonding

Tuesday, November 5, 2013: 3:50 PM
Meeting Room 230B (San Jose McEnery Convention Center)
Dr. Bernadette Domengès , LAMIPS, CRISMAT – NXP semiconductors - Presto-Engineering Europe laboratory, CNRS-UMR6508; ENSICAEN, UCBN, CAEN, France
Dr. Thomas Delaroque , Presto-Engineering Europe, CAEN, France
Mr. Christian Gautier , Presto-Engineering Europe, CAEN, France
Dr. Karine Danilo , Presto-Engineering Europe, CAEN, France
Mr. Erwan LeFlao , EADS Astrium, Elancourt, France

Summary:

Direct surface bonding of wafers in 3D integration requires perfectly smooth surfaces, with roughness values below 1 nm, usually characterized with Atomic Force Microscopy. An alternative technique, Digital Holography Microscopy is evaluated here and shown to be precise enough to differentiate adequate wafers, that is chemical mechanical polished from non treated ones