Automated Defect Analysis in Solar Cells Using EBIC
Automated Defect Analysis in Solar Cells Using EBIC
Tuesday, November 11, 2014: 8:50 AM
310 B (George R. Brown Convention Center )
Summary:
Electron Beam Induced Current (EBIC) characterisation is unique in its ability to provide quantitative high-resolution imaging of electrical defects in solar cells. In particular, EBIC makes it possible to image electrical activity of single dislocations in a Focussed Ion Beam (FIB) Scanning Electron Microscope (SEM), to cut and lift-out a micro-specimen containing a particular dislocation, and then transfer for further structural or chemical analysis. As typical solar cell material presents a complex array of defects, it is important to observe statistical variations within a sample and select the key sites for analysis. This contribution describes a method for automated defect identification and characterisation, and shows an application to mc-Si solar cells wafers selected from different heights along the manufactured ingot.
Electron Beam Induced Current (EBIC) characterisation is unique in its ability to provide quantitative high-resolution imaging of electrical defects in solar cells. In particular, EBIC makes it possible to image electrical activity of single dislocations in a Focussed Ion Beam (FIB) Scanning Electron Microscope (SEM), to cut and lift-out a micro-specimen containing a particular dislocation, and then transfer for further structural or chemical analysis. As typical solar cell material presents a complex array of defects, it is important to observe statistical variations within a sample and select the key sites for analysis. This contribution describes a method for automated defect identification and characterisation, and shows an application to mc-Si solar cells wafers selected from different heights along the manufactured ingot.