STUDENT PAPER: The Failure Mechanism study of Single Metal Contact Open Induced Scan Chain Failure in 90nm node VLSI Using Electron Beam Absorb Current (EBAC) Technology.

Wednesday, November 8, 2017
Dr. Chao-Cheng Ting , National Chiao-Tung University, Hsinchu, Taiwan
Ya-Chi Liu , Optmic Lab, Walnut, CA
Mr. Hsuan-Hsien Chen , Faraday Technology Corp., Hsin Chu, Taiwan
Mr. Chung-Ching Tsai , Faraday Technology Corp., Hsin Chu, Taiwan
Liwen Shih , University of Houston-Clear Lake, Houston, TX


This study used EBAC to locate the single metal contact open defect which caused the scan chain failure. The failure is affected by the residual of silicate photo-resist polymer during the fabrication of metal via 4. In this research, we demonstrated a successful case study and yield enhancement of using EBAC which is a robust methodology in defect localization for complex VLSI in 90nm technology node.