STUDENT PAPER: The Failure Mechanism study of Single Metal Contact Open Induced Scan Chain Failure in 90nm node VLSI Using Electron Beam Absorb Current (EBAC) Technology.
STUDENT PAPER: The Failure Mechanism study of Single Metal Contact Open Induced Scan Chain Failure in 90nm node VLSI Using Electron Beam Absorb Current (EBAC) Technology.
Wednesday, November 8, 2017
Summary:
This study used EBAC to locate the single metal contact open defect which caused the scan chain failure. The failure is affected by the residual of silicate photo-resist polymer during the fabrication of metal via 4. In this research, we demonstrated a successful case study and yield enhancement of using EBAC which is a robust methodology in defect localization for complex VLSI in 90nm technology node.
This study used EBAC to locate the single metal contact open defect which caused the scan chain failure. The failure is affected by the residual of silicate photo-resist polymer during the fabrication of metal via 4. In this research, we demonstrated a successful case study and yield enhancement of using EBAC which is a robust methodology in defect localization for complex VLSI in 90nm technology node.