In situ Carbon Deposition in FIB for Reducing TEM Lamella Curtains Caused by Air-gaps of 1X-nm NAND Flash Memory

Thursday, November 9, 2017: 8:50 AM
Ballroom C (Pasadena Convention Center)
Dr. Hsin-Cheng Hsu , Macronix International Co., Ltd., Hsin-chu, Taiwan
Dr. Chun-Hung Lin , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. Huai-San Ku , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. Dun-Fan Zhuang , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mrs. Ru-Hui Lin , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. I-An Chen , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. Bing-Chang Li , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. Tsung-Yi Lin , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mrs. Pei-Lin Hsu , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. Wei-Ming Hsiao , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. Chin-Chih Yeh , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. N.-T. Lian , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. Ta-Hone Yang , Macronix International Co., Ltd., Hsin-chu, Taiwan
Mr. K.-C. Chen , Macronix International Co., Ltd., Hsin-chu, Taiwan

Summary:

We have introduced a simple, rapid and practical way for in-situ air gaps fill-in in FIB for NAND flash memory. The curtains issue is overcome so that observing the wordlines and air gaps at the same time becomes achievement. With applying the method, the efficiency can be enhanced by simplifying the complicated sample fabrication and the yield improvement can be supported by supplying accurate data. Moreover, this mentioned approach shows great potential to solve some specific defect modes which have influence of voids.
See more of: FIB Sample Preparation
See more of: Technical Program