Device Channel Temperature Measurement Using NIR Emission
Device Channel Temperature Measurement Using NIR Emission
Monday, November 6, 2017: 10:30 AM
Ballroom D (Pasadena Convention Center)
Summary:
In this paper, we present a new technique for device temperature measurement using spontaneous near infrared (NIR) emission from an IC. By leveraging modeling and data analysis, time-integrated emission measurements are used to estimate the temperature inside the channel of CMOS transistors. The non-invasive nature of the technique allows one to reliably monitor the temperature of any device on-chip without the need for circuit modifications or dedicated on-chip sensors and with a spatial higher spatial resolution than thermal cameras. This method has important applications for modeling heat dissipation during early process development, localizing hot spots, calibrating on-chip sensors, etc. In this paper, we demonstrate the technique for a 22 nm planar SOI test chip.
In this paper, we present a new technique for device temperature measurement using spontaneous near infrared (NIR) emission from an IC. By leveraging modeling and data analysis, time-integrated emission measurements are used to estimate the temperature inside the channel of CMOS transistors. The non-invasive nature of the technique allows one to reliably monitor the temperature of any device on-chip without the need for circuit modifications or dedicated on-chip sensors and with a spatial higher spatial resolution than thermal cameras. This method has important applications for modeling heat dissipation during early process development, localizing hot spots, calibrating on-chip sensors, etc. In this paper, we demonstrate the technique for a 22 nm planar SOI test chip.