Fin level defect isolation inside a FinFET using electron beam alteration of current flow

Tuesday, November 7, 2017: 4:30 PM
Ballroom A (Pasadena Convention Center)
Dr. H. J. Ryu , Intel, Hillsboro, OR
Dr. Amish B. shah , Intel, Hillsboro, OR
Dr. Yunfei Wang , Intel, Hillsboro, OR
Dr. Wen-Hsien Chuang , Intel, Hillsboro, OR
Dr. Tom X. Tong , Intel Corp., Hillsboro, OR

See more of: Nanoprobing and Electrical Characterization II
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