Combining Volume Scan Diagnosis and Dynamic FA for Precise Isolation of Manufacturing Defects
Combining Volume Scan Diagnosis and Dynamic FA for Precise Isolation of Manufacturing Defects
Tuesday, November 7, 2017: 4:05 PM
Ballroom C (Pasadena Convention Center)
Summary:
Advances in semiconductor manufacturing technologies have led to newer types of defects that are difficult to identify, causing longer yield ramp times. Traditionally, yield has been limited to random particle defects but layout systematic defects are increasingly dominating the fail paretos on advanced technologies. Identifying systematic defects precisely and rapidly is a must. This paper presents ideas that combine volume scan diagnosis and non-destructive electrical fault isolation techniques such as photon-emission microscopy, soft defect localization and laser voltage imaging/probing to debug manufacturing defects precisely.
Advances in semiconductor manufacturing technologies have led to newer types of defects that are difficult to identify, causing longer yield ramp times. Traditionally, yield has been limited to random particle defects but layout systematic defects are increasingly dominating the fail paretos on advanced technologies. Identifying systematic defects precisely and rapidly is a must. This paper presents ideas that combine volume scan diagnosis and non-destructive electrical fault isolation techniques such as photon-emission microscopy, soft defect localization and laser voltage imaging/probing to debug manufacturing defects precisely.