Nanoprobing Beyond 14nm with Latest Generation SEM-based Nano-probers
Nanoprobing Beyond 14nm with Latest Generation SEM-based Nano-probers
Monday, November 6, 2017: 4:40 PM
Ballroom C (Pasadena Convention Center)
Summary:
As the technology scales down, SEM-based nanoprobing faces challenges. Transistors are more susceptible to electron beam damage. As SEM energy decreases to prevent damage, imaging resolution degrades, making it increasingly more difficult to position the probe tips on the contacts. Once landed, the probe stability is important to maintain a good electrical connection throughout the measurement time. We review how well the latest generation of nano probers addresses these challenges on the sub 14nm transistors. Results are compared with previous generation tools to illustrate the improved imaging and stability capabilities
As the technology scales down, SEM-based nanoprobing faces challenges. Transistors are more susceptible to electron beam damage. As SEM energy decreases to prevent damage, imaging resolution degrades, making it increasingly more difficult to position the probe tips on the contacts. Once landed, the probe stability is important to maintain a good electrical connection throughout the measurement time. We review how well the latest generation of nano probers addresses these challenges on the sub 14nm transistors. Results are compared with previous generation tools to illustrate the improved imaging and stability capabilities