Use of 3D Xray Microscopy for BEOL and Advanced Packaging Failure Analysis
Use of 3D Xray Microscopy for BEOL and Advanced Packaging Failure Analysis
Monday, November 6, 2017: 12:20 PM
Ballroom C (Pasadena Convention Center)
Summary:
With the growing complexity and interconnect density of modern semiconductor packages, package level FA is also facing new challenges and requirements. 3D Xray Microscopy (XRM) is considered a key method to fulfill these requirements and enable high success FA yield. After a short introduction into the basic principles of lab-based Xray tomography, 2 different approaches of Xray investigations are discussed and an integration into the daily FA flow is proposed. In the first example, fault isolation on a fully packaged device is demonstrated using a stacked die device. In the second example, a newly developed sample preparation flow in combination with nanospot 3D Xray Microscopy for Chip-Package-Interaction and Back-end-of-line feature imaging is introduced.
With the growing complexity and interconnect density of modern semiconductor packages, package level FA is also facing new challenges and requirements. 3D Xray Microscopy (XRM) is considered a key method to fulfill these requirements and enable high success FA yield. After a short introduction into the basic principles of lab-based Xray tomography, 2 different approaches of Xray investigations are discussed and an integration into the daily FA flow is proposed. In the first example, fault isolation on a fully packaged device is demonstrated using a stacked die device. In the second example, a newly developed sample preparation flow in combination with nanospot 3D Xray Microscopy for Chip-Package-Interaction and Back-end-of-line feature imaging is introduced.