Failure analysis and defect inspection of high electron mobility transistors by high resolution cathodoluminescence

Wednesday, November 8, 2017
Dr. Christian Monachon, PhD , Attolight, Lausanne, Switzerland
Dr. Marcin S. Zielinksi, PhD , Attolight, Lausanne, Switzerland
Dr. David Gachet, PhD , Attolight, Lausanne, Switzerland
Dr. Samuel Sonderegger, PhD , Attolight, Lausanne, Switzerland
Mr. Sylvain Muckenhirn , Attolight, Lausanne, Switzerland
Dr. Jean Berney , Attolight, Lausanne, Switzerland
D. Poppitz , Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle,, Germany
A. Graff , Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle,, Germany
S. Breuer , Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg,, Germany
L. Kirste , Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg,, Germany

Summary:

Quantitative cathodoluminescence (CL) microscopy is a new optical spectroscopy technique that measures electron beam-induced optical emission over large field of view with unprecedented spatial resolution close to that of a scanning electron microscope (SEM). Correlation of surface morphology (SE contrast) with spectrally resolved and highly material composition sensitive CL emission, opens a new pathway in non-destructive failure and defect analysis and the nanometer scale. Here we present application of a modern CL microscope in defect and homogeneity metrology, as well as failure analysis in semiconducting electronic materials.
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