Influence of Sample Preparation on Intrinsic Stress inside a Model Chip, comparison of Results from Electric Read-Out and Raman Spectroscopy.

Monday, November 6, 2017: 1:10 PM
Ballroom C (Pasadena Convention Center)
Mr. Tim Schaffus , Infineon Technologies AG, Regensburg, Germany

Summary:

The benchmarking of typical preparation methods under the aspect of influence on the initial intrinsic stress inside an electric component will be presented in this work. For the characterization of the influence of these different methods Raman spectroscopy and the possibility of the employed model chip to read-out the intrinsic stress on an electrical way under using the piezo resistive effect will be applied.