High throughput and multiple length scale sample preparation for characterization and failure analysis of advanced semiconductor devices
High throughput and multiple length scale sample preparation for characterization and failure analysis of advanced semiconductor devices
Wednesday, November 13, 2019
Exhibit Hall D (Oregon Convention Center)
Summary:
This study shows a electron microscopy-focused, high throughput workflow for sample preparation by Ar+ milling for multi-length scale characterization. The methodology results in samples free from artifacts and is integrable to the current physical failure analysis procedure.
This study shows a electron microscopy-focused, high throughput workflow for sample preparation by Ar+ milling for multi-length scale characterization. The methodology results in samples free from artifacts and is integrable to the current physical failure analysis procedure.