Scanning Capacitance Microscopy and Spectroscopy for Root Cause Analysis on Location Specific Individual FinFET Devices
Scanning Capacitance Microscopy and Spectroscopy for Root Cause Analysis on Location Specific Individual FinFET Devices
Thursday, November 14, 2019: 10:50 AM
F 150/151 (Oregon Convention Center)
Summary:
Scanning Capacitance Microscopy was successfully used for discovery of an individual fin dopant anomaly in the failure analysis of a 14nm FinFET technology part in which a specific PFET was called out using traditional fault localization methods.
Scanning Capacitance Microscopy was successfully used for discovery of an individual fin dopant anomaly in the failure analysis of a 14nm FinFET technology part in which a specific PFET was called out using traditional fault localization methods.