Unintentional doping effects on atomically-thin Nb-doped MoS2 observed by scanning nonlinear dielectric microscopy
Unintentional doping effects on atomically-thin Nb-doped MoS2 observed by scanning nonlinear dielectric microscopy
Wednesday, November 13, 2019
Exhibit Hall D (Oregon Convention Center)
Summary:
Recently, layered semiconductors such as transition metal dichalcogenides have been under extensive research. However, the electronic properties of these atomically-thin semiconductor materials have been still under ongoing investigation. Here we experimentally show that novel intermittent contact scanning nonlinear dielectric microscopy (SNDM) with boxcar integration can image an unintentional doping effect in monoatomic layer MoS2. Our result indicates that SNDM can help the investigation of anomalous doping effects in atomically-thin layered semiconductors.
Recently, layered semiconductors such as transition metal dichalcogenides have been under extensive research. However, the electronic properties of these atomically-thin semiconductor materials have been still under ongoing investigation. Here we experimentally show that novel intermittent contact scanning nonlinear dielectric microscopy (SNDM) with boxcar integration can image an unintentional doping effect in monoatomic layer MoS2. Our result indicates that SNDM can help the investigation of anomalous doping effects in atomically-thin layered semiconductors.